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LS421 [Linear Systems]

LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET; 低漏低漂移整体式双N沟道JFET
LS421
型号： LS421
厂家： Linear Systems    Linear Systems
描述：

LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
低漏低漂移整体式双N沟道JFET
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LS421, LS422, LS423,  
LS424, LS425, LS426  
LOW LEAKAGE LOW DRIFT  
MONOLITHIC DUAL N-CHANNEL JFET  
Linear Integrated Systems  
FEATURES  
HIGH INPUT IMPEDANCE  
HIGH GAIN  
IG=0.25pA MAX  
gfs=120µmho MIN  
LOW POWER OPERATION  
VGS(off)=2V MAX  
ABSOLUTE MAXIMUM RATINGS NOTE 1  
S1  
G2  
C
4
@ 25°C (unless otherwise noted)  
G1  
S2  
3
5
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65° to +150°C  
+150°C  
D1  
D1  
D2  
2
6
Maximum Voltage and Current for Each Transistor NOTE 1  
D2  
1
7
S1  
G2  
-VGSS  
-VDSO  
-IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
40V  
TO-78  
BOTTOM VIEW  
40V  
G1  
S2  
10mA  
22 X 20 MILS  
Maximum Power Dissipation  
Device Dissipation @ Free Air - Total  
400mW @ +125°C  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS  
|∆VGS1-2 /∆T| max. Drift vs. Temperature  
10  
10  
2.0  
25  
15  
2.0  
40  
25  
2.0  
10  
10  
3.0  
25  
15  
40  
25  
µV/°C  
mV  
V
VDG= 10V ID= 30µA  
TA=-55°C to +125°C  
VDG=10V ID= 30µA  
|VGS1-2| max.  
VGS(off)  
Offset Voltage  
GATE VOLTAGE  
Pinchoff Voltage  
3.0  
2.9  
3.0  
2.9  
VDS=10V  
ID= 1nA  
VGS  
Operating Range  
Operating  
1.8  
.25  
250  
1.0  
1.0  
1.8  
.25  
250  
1.0  
1.0  
1.8  
.25  
250  
1.0  
1.0  
2.9  
V
pA  
pA  
pA  
nA  
VDG=10V  
VDG=10V  
TA= +125°C  
VDS= 0V  
ID= 30µA  
ID= 30µA  
IGmax.  
.500  
500  
3.0  
.500 .500  
-IGmax.  
-IGSSmax.  
-IGSSmax.  
High Temperature  
At Full Conduction  
High Temperature  
500  
3.0  
3.0  
500  
3.0  
3.0  
VGS= 20V  
3.0  
TA= +125°C  
SYMBOL  
BVGSS  
CHARACTERISTICS  
Breakdown Voltage  
MIN.  
40  
TYP.  
60  
MAX.  
UNITS  
CONDITIONS  
VDS= 0  
--  
--  
V
V
IG= 1nA  
ID= 0  
BVGGO  
Gate-to-Gate Breakdown  
40  
--  
IG= 1µA  
IS= 0  
TRANSCONDUCTANCE  
Yfss  
Yfs  
Full Conduction  
300  
120  
--  
1500  
350  
µmho VDS= 10V  
µmho VDG= 10V  
VGS= 0  
f= 1kHz  
f= 1kHz  
Typical Operation  
DRAIN CURRENT  
Full Conduction  
200  
ID= 30µA  
60  
60  
--  
--  
1000  
1800  
µA  
µA  
LS421-3  
LS424-6  
VDS= 10V VGS= 0  
IDSS  
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261  
SYMBOL  
CHARACTERISTICS  
MIN.  
TYP.  
MAX. UNITS  
CONDITIONS  
OUTPUT CONDUCTANCE  
YOSS  
YOS  
Full Conduction  
Operating  
--  
--  
--  
10  
µmho  
µmho  
VDS= 10V  
VDG= 10V  
VGS= 0  
0.1  
3.0  
ID= 30µA  
COMMON MODE REJECTION  
CMR  
CMR  
-20 log |∆VGS1-2/∆VDS  
|
--  
--  
90  
90  
--  
--  
dB  
dB  
∆VDS= 10 to 20V  
∆VDS= 5 to 10V  
ID= 30µA  
ID= 30µA  
-20 log |∆VGS1-2/∆VDS  
|
NOISE  
NF  
en  
Figure  
--  
--  
--  
1.0  
70  
dB  
V
DG= 10V  
ID= 30µA RG= 10MΩ  
f= 10Hz  
Voltage  
20  
10  
nV/√Hz VDG= 10V  
ID= 30µA f= 10Hz  
ID= 30µA f= 1kHz  
VDG= 10V  
CAPACITANCE  
CISS  
Input  
--  
--  
--  
--  
3.0  
1.5  
pF  
pF  
VDS= 10V  
VDS= 10V  
VGS= 0 f= 1MHz  
VGS= 0 f= 1MHz  
CRSS  
Reverse Transfer  
P-DIP  
TO-71  
TO-78  
(8.13)  
(7.37)  
0.320  
0.290  
Six Lead  
0.335  
0.370  
0.230  
0.209  
DIA.  
0.195  
0.175  
0.305  
0.335  
DIA.  
S1 1  
G2  
SS  
8
7
0.405  
(10.29)  
MAX.  
MAX.  
0.030  
MAX.  
0.150  
0.115  
0.165  
0.185  
0.040  
D1 2  
SS 3  
G1 4  
0.016  
0.019  
DIM. A  
6 D2  
5 S2  
MIN. 0.500  
6 LEADS  
0.019  
0.016  
0.500 MIN.  
0.050  
0.016  
0.021  
DIM. B  
SEATING  
PLANE  
DIA.  
0.200  
0.100  
0.100  
0.029  
0.045  
SOIC  
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)  
0.158 (4.01)  
1
8
5
6
0.100  
1  
8
7
6
5
N/C  
S1  
45°  
45°  
D1  
G1  
2  
0.188  
0.197  
G2  
(4.78)  
(5.00)  
D2  
3
0.046  
0.036  
0.048  
0.028  
0.028  
0.034  
N/C  
S2  
4  
(5.79)  
0.228  
(6.20)  
0.244  
S1  
D1  
G1  
N/C  
G2  
D2  
S2  
N/C  
NOTES:  
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.  
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261  

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